數(shù)字信號(hào)Driver模塊采用先進(jìn)TDBI技術(shù),可在-40℃~150℃的環(huán)境下,對(duì)所有≤50W集成電路IC(車(chē)規(guī)級(jí)MCU、SoC、FPGA、CPU等不同封裝類(lèi)型)器件進(jìn)行高溫動(dòng)態(tài)測(cè)試和壽命評(píng)估試驗(yàn)的同時(shí),建立其失效模型,分析其失效機(jī)理。
┃ 高溫試驗(yàn)箱 | 2;-40℃~150℃;5000W per chamber |
┃ 獨(dú)立溫控 | 24DUT (20W) / 6-9DUT (50W);accuracy:±2℃ |
┃ 容量 | 16*2 Slot;Temperature Zone*2 |
┃ Pattern Zone | 32 |
┃ Slots Pitch | 72mm |
┃ BIB Size | 564mm*610mm |
┃ System Repetition Rate | 20MHz (Maximum) |
┃ Vector Memory | 64M Words |
┃ Error Log | 2K (Per I/O) |
┃ Driver | VH 0.6~4.0V (2 Level) |
┃ Receiver | 0.6~4.0V (VRH,VRL) |
┃ DPS | 8 supplies 0.0~9.5V, 2mV resolution Maximum output: 60A, 240W Accuracy: ±0.3% of output voltage±10mV Ripple & noise:30mV peak to peak |
2 supply 0.0~5.0 V, 2 mV resolution |
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